flash.c
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#include "flash.h"
u32 STMFLASH_ReadWord(u32 faddr)
{
return *(vu32*)faddr;
}
uint16_t STMFLASH_GetFlashSector(u32 addr)
{
if(addr<ADDR_FLASH_SECTOR_1)return FLASH_Sector_0;
else if(addr<ADDR_FLASH_SECTOR_2)return FLASH_Sector_1;
else if(addr<ADDR_FLASH_SECTOR_3)return FLASH_Sector_2;
else if(addr<ADDR_FLASH_SECTOR_4)return FLASH_Sector_3;
else if(addr<ADDR_FLASH_SECTOR_5)return FLASH_Sector_4;
else if(addr<ADDR_FLASH_SECTOR_6)return FLASH_Sector_5;
else if(addr<ADDR_FLASH_SECTOR_7)return FLASH_Sector_6;
else if(addr<ADDR_FLASH_SECTOR_8)return FLASH_Sector_7;
else if(addr<ADDR_FLASH_SECTOR_9)return FLASH_Sector_8;
else if(addr<ADDR_FLASH_SECTOR_10)return FLASH_Sector_9;
else if(addr<ADDR_FLASH_SECTOR_11)return FLASH_Sector_10;
return FLASH_Sector_11;
}
uint32_t STM_FLASH_Erase(uint32_t addrx)
{
FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存
FLASH_Unlock(); //解锁
uint8_t ret = 1;
switch(addrx)
{
case APP_RUN_ADDR:
{
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_4,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_5,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_6,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_7,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
}
break;
case FLAG_BASE_ADDR:
{
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_1,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
}
break;
case PARAM_BASE_ADDR:
{
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_2,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
}
break;
case APP_LOAD_ADDR:
{
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_8,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_9,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_10,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
if(FLASH_COMPLETE != FLASH_EraseSector(FLASH_Sector_11,VoltageRange_3))//VCC=2.7~3.6V之间!!
{
ret = 0;
break;
}
}
break;
default:break;
}
FLASH_Lock();
FLASH_DataCacheCmd(ENABLE);//FLASH擦除期间,必须禁止数据缓存
return ret;
}
uint32_t STM_FLASH_Get_Block_Size(uint32_t addrx)
{
switch(addrx)
{
case APP_RUN_ADDR:
return (384+64)*1024;
case FLAG_BASE_ADDR:
case PARAM_BASE_ADDR:
return 16*1024;
case APP_LOAD_ADDR:
return (384+128)*1024;
default:break;
}
return 0;
}
//FlashAddress: start address for writing data buffer
//Data: pointer on data buffer
//DataLength: length of data buffer (unit is 32-bit word)
//return:
// 0=Data successfully written to Flash memory
// 1=Error occurred while writing data in Flash memory
uint32_t STMFLASH_Write(u32 WriteAddr,u32 *pBuffer,u32 NumToWrite)
{
u32 endaddr=0;
if(WriteAddr%4)
return 1 ; //非法地址
endaddr = WriteAddr + NumToWrite; //写入的结束地址
FLASH_Unlock(); //解锁
FLASH_DataCacheCmd(ENABLE);//FLASH擦除期间,必须禁止数据缓存
while(WriteAddr<endaddr)//写数据
{
if (FLASH_ProgramWord(WriteAddr, *pBuffer) == FLASH_COMPLETE)
{
/* Check the written value */
if (STMFLASH_ReadWord(WriteAddr) != *pBuffer)
{
/* Flash content doesn't match SRAM content */
// FLASH_DataCacheCmd(ENABLE); //FLASH擦除结束,开启数据缓存
FLASH_Lock();//上锁
return 1;
}
/* Increment FLASH destination address */
WriteAddr+=4;
pBuffer++;
}
else
{
// FLASH_DataCacheCmd(ENABLE); //FLASH擦除结束,开启数据缓存
FLASH_Lock();//上锁
return 1;
}
}
// FLASH_DataCacheCmd(ENABLE); //FLASH擦除结束,开启数据缓存
FLASH_Lock();//上锁
return 0;
}
#define Tracy 0
#if Tracy
void flash_write(u32 addr,u16 data)
{
FLASH_Unlock();
FLASH_ProgramHalfWord(addr,data);
FLASH_Lock();
}
void flash_write_string(u32 addr,u16* buff,u16 length)
{
char i=0;
FLASH_Unlock();
if(length%2==0)
length/=2;
else
length=length/2+1;
for(i=0;i<length;i++)
{
FLASH_ProgramHalfWord(addr,buff[i]);
addr+=2;
}
FLASH_Lock();
}
u16 flash_read(u32 addr)
{
return *(u16 *)(addr);
}
u16 flash_read_halfword(u32 addr)
{
return *(vu16*)addr;
}
void flash_read_string(u32 addr,u16 *rbuff,u16 length)
{
int i;
if(length%2==0)
length/=2;
else
length=length/2+1;
for(i=0;i<length;i++)
{
rbuff[i]=flash_read_halfword(addr);
addr+=2;
}
}
void flash_erase(u32 addrx)
{
FLASH_Unlock();
FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存
FLASH_EraseSector(STMFLASH_GetFlashSector(addrx),VoltageRange_3);//VCC=2.7~3.6V之间!!
FLASH_DataCacheCmd(ENABLE); //FLASH擦除结束,开启数据缓存
FLASH_Lock();
}
uint32_t STM_FLASH_Erase(uint32_t StartSector)
{
uint32_t UserStartSector = FLASH_Sector_1, i = 0;
/* Get the sector where start the user flash area */
UserStartSector = STMFLASH_GetFlashSector(StartSector);
for(i = UserStartSector; i <= FLASH_Sector_5; i += 8)
{
/* Device voltage range supposed to be [2.7V to 3.6V], the operation will
be done by word */
if (FLASH_EraseSector(i, VoltageRange_3) != FLASH_COMPLETE)
{
/* Error occurred while page erase */
return (1);
}
}
return (0);
}
#endif